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| NTUD3129P Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package Features * Dual P-Channel MOSFET * Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm * * * Package 1.5V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. These are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX 5.0 W @ -4.5 V -20 V 7.0 W @ -2.5 V 10 W @ -1.8 V 14 W @ -1.5 V -0.18 A ID Max Applications * General Purpose Interfacing Switch * Optimized for Power Management in Ultra Portable Equipment G1 D1 D2 G2 MAXIMUM RATINGS (TJ = 25C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TA = 25C TA = 85C TA = 25C TA = 25C PD -200 -600 -55 to 150 -200 260 mA C D2 mA C Top View 3 4 S2 ID Symbol VDSS VGS Value -20 8 -140 -100 -180 -125 mW G1 2 5 G2 mA S1 1 6 D1 Unit V V S1 P-Channel MOSFET S2 PINOUT: SOT-963 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% MARKING DIAGRAM SOT-963 CASE 527AA R M G RMG 1 = Specific Device Code = Date Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. (c) Semiconductor Components Industries, LLC, 2007 1 June, 2007 - Rev. 0 Publication Order Number: NTUD3129P/D NTUD3129P THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t = 5 s (Note 3) 3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. Symbol RqJA Max 1000 600 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = -250 mA VGS = 0 V, VDS = -5.0 V TJ = 25C TJ = 85C VGS = 0 V, VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(ON) VGS = VDS, ID = -250 mA VGS = -4.5 V, ID = -100 mA VGS = -2.5 V, ID = -50 mA VGS = -1.8 V, ID = -20 mA VGS = -1.5 V, ID = -10 mA VGS = -1.2 V, ID = -1.0 mA Forward Transconductance Source-Drain Diode Voltage gFS VSD VDS = -5.0 V, ID = -125 mA VGS = 0 V, ID = -10 mA -0.4 4.0 5.0 6.5 7.5 11.5 0.26 -0.65 -1.0 S V -1.0 5.0 7.0 10 14 W V IGSS TJ = 25C -20 -50 -200 -100 100 nA nA V Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = 5.0 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS f = 1 MHz, VGS = 0 V VDS = -15 V 12 2.7 1.0 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -15 V, ID = -180 mA, RG = 2.0 W 20 37 112 97 ns 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTUD3129P TYPICAL PERFORMANCE CURVES 0.36 ID, DRAIN CURRENT (AMPS) 3.0 V ID, DRAIN CURRENT (AMPS) 0.32 0.28 VGS = 3.5 V to 5 V TJ = 25C 2.5 V 0.36 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0 1 2 3 4 5 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 3 4 2 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) 5 VDS 5 V TJ = -55C TJ = 125C TJ = 25C 0.24 0.20 2.0 V 0.16 0.12 1.5 V 0.08 0.04 0 1.0 V Figure 1. On-Region Characteristics RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) 12 ID = 180 mA TJ = 25C 6 Figure 2. Transfer Characteristics TJ = 25C 5 4 3 2 1 0 0.05 VGS = 4.5 V VGS = 2.5 V 8 4 0 0 1 2 3 4 5 0.1 0.15 0.2 0.25 0.3 0.35 0.4 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1000 1.75 RDS(on), DRAIN-T O-SOURCE RESISTANCE (NORMALIZED) 1.5 ID = 180 mA VGS = 4.5 V IDSS, LEAKAGE (nA) VGS = 0 V TJ = 150C 100 TJ = 125C 1.25 1.0 0.75 0.5 10 0.25 0 -50 1 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTUD3129P TYPICAL PERFORMANCE CURVES 16 C, CAPACITANCE (pF) Ciss 12 t, TIME (ns) VGS = 0 V TJ = 25C 100 1000 VDD = 10 V ID = 180 mA VGS = 4.5 V td(off) tf tr td(on) 10 8 4 Coss Crss 0 0 2 16 18 20 4 6 8 10 12 14 GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.18 IS, SOURCE CURRENT (AMPS) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 VGS = 0 V TJ = 25C Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTUD3129PT5G Package SOT-963 (Pb-Free) Shipping 8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTUD3129P PACKAGE DIMENSIONS SOT-963 CASE 527AA-01 ISSUE A A D 6 5 12 e b 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.40 0.45 0.50 0.10 0.15 0.20 0.05 0.10 0.15 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 INCHES NOM MAX 0.018 0.020 0.006 0.008 0.004 0.006 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 MIN 0.016 0.004 0.002 0.037 0.03 -Y-X4 E 3 L HE DIM A b C D E e L HE C 0.08 X Y SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTUD3129P/D |
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